Asymmetric Bias Waveform Generator for Direct Control of Substrate Voltage and Ion Energy
Advanced Energy’s eVoS platform is a revolutionary power technology for the direct control of ion energy distribution in plasma processing. The integrated, single-enclosure system delivers a customized width and precise control of ion energy for node etch and deposition applications. With a 1.2 kV asymmetric waveform, the eVoS LE applies metrology and proprietary control to deliver bias plasma performance for sensitive feature formation and efficiency unachievable by conventional RF methods.
- Independently regulated voltage and current output for maximum control of bias conditions
- Proprietary control system for direct manipulation of wafer bias characteristics
- Fast, digitized metrology for real-time output monitoring and control
- Improved efficiency with power applied directly to ion acceleration for less waste to heating
- Enhanced ability to customize ion energy distribution, eliminate tails, and narrow distributions to maximize concentration to process-optimal levels
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